Published May 26, 2006 | Version v1
Journal article

Oxygen grafting and etching of hexatriacontane in late N2-O2 post-discharges

  • 1. Laboratoire de Science et Genie des Surfaces-Ecole des Mines-Parc de Saurupt, 54042 Nancy Cedex (France)

Description

Treatments of the hexatriacontane at 330 K (HTC-C36H74) in late N2-O2 remote microwave plasmas under 400 Pa is presented in this work. Time evolutions of the mass of the HTC are reported as a function of the gas composition and correlation with the HTC compositions by chemical analyses is carried out. The nitrogen atoms alone have no significant effect on the hexatriacontane. On the contrary, oxygen late post-discharges can be as efficient as direct plasma treatments to etch the HTC. In N2-O2 post-discharges, grafting and etching occur during a single experiment. However, the role of the oxygen atoms seems to be strongly correlated with the functionalization of the HTC and not clearly with its etching

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.08.016;
PII
S0040-6090(05)01209-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
506-507
Journal Page Range
p. 212-216
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Joint meeting of 7. APCPST (Asia Pacific conference on plasma science and technology) and 17. SPSM (symposium on plasma science for materials)
Dates
29 Jun - 2 Jul 2004
Place
Fukuoka (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38004615
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL ANALYSIS; ETCHING; MICROWAVE RADIATION; NITROGEN; OXYGEN; POLYMERS
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; NONMETALS; RADIATIONS; SURFACE FINISHING

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.