Published May 26, 2006
| Version v1
Journal article
Oxygen grafting and etching of hexatriacontane in late N2-O2 post-discharges
- 1. Laboratoire de Science et Genie des Surfaces-Ecole des Mines-Parc de Saurupt, 54042 Nancy Cedex (France)
Description
Treatments of the hexatriacontane at 330 K (HTC-C36H74) in late N2-O2 remote microwave plasmas under 400 Pa is presented in this work. Time evolutions of the mass of the HTC are reported as a function of the gas composition and correlation with the HTC compositions by chemical analyses is carried out. The nitrogen atoms alone have no significant effect on the hexatriacontane. On the contrary, oxygen late post-discharges can be as efficient as direct plasma treatments to etch the HTC. In N2-O2 post-discharges, grafting and etching occur during a single experiment. However, the role of the oxygen atoms seems to be strongly correlated with the functionalization of the HTC and not clearly with its etching
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.08.016;
- PII
- S0040-6090(05)01209-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 506-507
- Journal Page Range
- p. 212-216
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Joint meeting of 7. APCPST (Asia Pacific conference on plasma science and technology) and 17. SPSM (symposium on plasma science for materials)
- Dates
- 29 Jun - 2 Jul 2004
- Place
- Fukuoka (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38004615
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL ANALYSIS; ETCHING; MICROWAVE RADIATION; NITROGEN; OXYGEN; POLYMERS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; NONMETALS; RADIATIONS; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.