Synthesis,Structure and Electrical Properties of(SnO2)x(In2O3)1−x(x=0.5–1) Nanocomposites

The experimental results of synthesizing thin films (<1 μm thick) of (SnO2)x(In2O3)1−x (x = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O2 atmosphere are presented. The films, deposited on hot substrates (400°C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO2)x(In2O3)1−x with x = 0.9 are the most promising for applications in gas sensorics.