Published August 1990
| Version v1
Journal article
High-speed metal-semiconductor-metal photodetectors on InP:Fe
- 1. Institut fur Festkorperphysik der Technischen Universitat Berlin, D-1000 Berlin 12 (Germany, F.R.)
Description
Metal-semiconductor-metal photodetectors on semi-insulating InP:Fe with a lateral planar structure have been fabricated. The detectors exhibit low dark currents of about 10 nA, an impulse response of 26 ps FWHM, and an internal quantum efficiency of 80%, all at 10 V bias. An electrical cut off frequency of 40 GHz for the packaged detectors is obtained from s-parameter measurements demonstrating that the response time is not limited by the parasitic elements of the devices
Additional details
Publishing Information
- Journal Title
- IEEE Photonics Technology Letters
- Journal Volume
- 2
- Journal Issue
- 8
- Series
- IEEE Photonics Technol. Lett.
- Journal Page Range
- 574-576
- ISSN
- 1041-1135
- CODEN
- IPTLE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22002868
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- FABRICATION; INDIUM PHOSPHIDES; IRON ADDITIONS; LATTICE PARAMETERS; MATERIALS; MIS TRANSISTORS; PHOTODETECTORS; QUANTUM EFFICIENCY; RESPONSE FUNCTIONS; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- EFFICIENCY; FUNCTIONS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSISTORS