Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

Highlights: • High quality AlGaN/InGaN heterostructures are grown and the effects of InGaN channel thickness on the structural and transport properties are investigated in detailed. • A high electron mobility of 1712 cm²/Vis achieved for the heterostructures with an optimum channel thickness of 21 nm, indicating the huge potential of InGaN channel heterostructures in high frequency and high power applications. • The analyze method in this work can be generalized to both the studies of InGaN channel heterostructures with arbitrary component and all the heterostructures with inserted channel. - Abstract: High-quality AlGaN/InGaN heterostructures are grown and the effects of InGaN channel thickness on the structure and transport properties are investigated. With the increase of InGaN channel thickness from 7 nm to 28 nm, the two-dimensional electron gas density decreases continuously, while the mobility shows a trend of increasing at first, and then decreasing. The optimum thickness of 21 nm is obtained for the In_0.05Ga_0.95N channel, achieving a high electron mobility of 1712 cm²/V, which indicates the huge potential for InGaN channel heterostructures in high-frequency and high-power applications. The variation in transport properties is studied by analyzing the structure formation, material quality, and interface characteristic in detail. The results are not only beneficial for the further study of the InGaN channel heterostructures, but also instructive for the other inserted channel system.