Published 1977 | Version v1
Journal article

Electronic properties of ion implantation lattice defects in PbTe

  • 1. Hochschule fuer Sozial- und Wirtschaftswissenschaften, Linz (Austria)

Description

no abstract available

Additional details

Additional titles

Original title (German)
Elektronische Eigenschaften von Ionenimplantations-Gitterschaeden in PbTe

Publishing Information

Journal Title
Verh. Dtsch. Phys. Ges.
Journal Issue
no. 1
Series
Verh. Dtsch. Phys. Ges.

Conference

Title
Spring meeting of the Arbeitskreis Festkoerperphysik at the Deutsche Physikalische Gesellschaft e.V. in conjunction with the Nederlandse Natuurkundige Vereninging and 2. symposium on solid state device technology.
Dates
7 - 12 Mar 1977.
Place
Muenster, Germany, F.R.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
8319573
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANTIMONY IONS; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; ION IMPLANTATION; KEV RANGE; LEAD IONS; LEAD TELLURIDES; TELLURIUM IONS
Descriptors DEC
ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; ENERGY RANGE; IONS; LEAD COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Notes
Short communication only.
Secondary number(s)
AED-Conf--77-079-026.