Published May 2015
| Version v1
Journal article
Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation
Creators
- 1. Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
- 2. Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
- 3. Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China)
Description
Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/17/5/053023Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 17
- Journal Issue
- 5
- Journal Page Range
- [8 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47124768
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; CRYSTAL GROWTH; LAYERS; MOLECULAR BEAM EPITAXY; MOLYBDENUM SELENIDES; OPTOELECTRONIC DEVICES; TRANSITION ELEMENTS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRONIC EQUIPMENT; ELEMENTS; EPITAXY; EQUIPMENT; HEAT TREATMENTS; METALS; MOLYBDENUM COMPOUNDS; OPTICAL EQUIPMENT; REFRACTORY METAL COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSDUCERS; TRANSITION ELEMENT COMPOUNDS