Published May 2010 | Version v1
Journal article

Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

  • 1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  • 2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)
  • 3. Nagoya Institute of Technology, Nagoya, Aichi 466-8555 (Japan)
  • 4. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)

Description

We demonstrate high-quality epitaxial growth of Heusler alloy Co2FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 deg. C. Even for growth at such a low temperature, L21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Moessbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2FeSi samples reported.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
107
Journal Issue
9
Journal Page Range
p. 09B105-09B105.3
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
11. joint MMM-Intermag conference
Dates
18-22 Jan 2010
Place
Washington, DC (United States)

Optional Information

Notes
(c) 2010 American Institute of Physics