Published May 2010
| Version v1
Journal article
Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy
Creators
- 1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
- 2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)
- 3. Nagoya Institute of Technology, Nagoya, Aichi 466-8555 (Japan)
- 4. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)
Description
We demonstrate high-quality epitaxial growth of Heusler alloy Co2FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 deg. C. Even for growth at such a low temperature, L21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Moessbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2FeSi samples reported.
Additional details
Identifiers
- DOI
- 10.1063/1.3350915;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 107
- Journal Issue
- 9
- Journal Page Range
- p. 09B105-09B105.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 11. joint MMM-Intermag conference
- Dates
- 18-22 Jan 2010
- Place
- Washington, DC (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069655
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT ALLOYS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON SPECTROSCOPY; GERMANIUM; HEUSLER ALLOYS; IRON ALLOYS; LAYERS; MAGNETIC MOMENTS; MOESSBAUER EFFECT; MOLECULAR BEAM EPITAXY; SILICON ALLOYS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; COHERENT SCATTERING; COPPER ALLOYS; COPPER BASE ALLOYS; CORROSION RESISTANT ALLOYS; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; FILMS; MANGANESE ALLOYS; METALS; MICROSCOPY; SCATTERING; SPECTROSCOPY; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- (c) 2010 American Institute of Physics