High resolution TOF - SIMS depth profiling of nano-film multilayers

We present the results of depth profiling studies conducted using an indigenously developed dual-beam high resolution Time-of-Flight Secondary Ion Mass Spectrometer (TOF-SIMS) on thinfilm W-C-W multilayer structure grown on Si substrate. Opto 8 layers could be clearly identified. Mixing of layers is seen which from analysis using roughness model calculations indicate a mixing thickness of about 2nm that correspond to the escape depth of secondary ions from the sample.