Selective energy deposition into silicon films

By modelling the energy transport considering the moving boundary it has been possible to find out optimized parameters to get improved oxides grown on laser smoothed polycrystalline silicon film surfaces. Two conditions were taken into account: the melting depth was equal to the grain diameter of the polysilicon and the heat pulses in the gate oxide were low in order to save its quality. Similar layer systems were prepared and experimentally tested. Both leakage current of the oxide grown on polysilicon and carrier trapping of the gate oxide were investigated. The smoothed silicon caused a notable decrease in the leakage current, but no change of the gate oxide properties