Published 2003
| Version v1
Journal article
Atomic layer deposition of ZnO thin films and dot structures
Creators
- 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
- 2. Warsaw Agricultural Univ. (Poland). Dept. of Physiological Sciences
- 3. Macquarie Univ., North Ryde (Australia), Division of Information and Communication Sciences
- 4. University of Technology, Sydney(Australia). Microstructural Analysis Unit
Description
Successful growth of thin films and quantum dots of ZnO by atomic layer deposition (ALD) is reported. Properties of ZnO films produced by four different ALD-procedures and by oxidation of ALD-grown ZnS films are discussed. The use of thin ZnO films as buffer layers for GaN deposition is also shortly described. (author)
Additional details
Identifiers
- URL
- http://www.ebsco.com;
Publishing Information
- Journal Title
- Proceedings of the Estonian Academy of Sciences. Physics, Mathematics
- Journal Volume
- 52
- Journal Issue
- 3
- Journal Page Range
- p. 277-288
- ISSN
- 1406-0086
INIS
- Country of Publication
- Estonia
- Country of Input or Organization
- Estonia
- INIS RN
- 35018290
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CATHODOLUMINESCENCE; EPITAXY; PRECURSOR; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CORUNDUM; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; FILMS; LUMINESCENCE; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Contract/Grant/Project number
- Grant No. PBZ-KNB-044/P03/2001; SEZAM grant
- Notes
- 8 figs., 13 refs.
- Funding organization
- Polish State Committee for Scientific Research (Poland); Foundation for Polish Science (Poland)