Published 1983 | Version v1
Book

Performance of Merck Selectilux P positive photoresist in aluminium plasma etching and high current ion implantation

Creators

  • 1. E. Merck, Darmstadt (Germany, F.R.)

Description

Recently, Merck has introduced a new novolak resin based positive resist system with improved performance in VLSI semiconductor processing. Performance data is presented in some detail. Topics stressed include the performance during aluminium etching using chlorine containing plasma and high current ion implantation. It will be shown that excellent performance can be obtained using certain processing techniques when severe thermal/reactive plasma environments are encountered. (author)

Additional details

Publishing Information

Publisher
Cahners Exposition Group SA.
Imprint Place
Guildford (UK)
Imprint Title
Proceedings of the technical programme - Semiconductors '83 international
Imprint Pagination
175 p.
Journal Page Range
p. 53-64.

Conference

Title
Semiconductors '83 international meeting.
Dates
27-29 Sep 1983.
Place
Birmingham (UK).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
15031825
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; CHLORINE; ETCHING; FABRICATION; INTEGRATED CIRCUITS; ION IMPLANTATION; PERFORMANCE; PLASMA; RESINS; SEMICONDUCTOR DEVICES
Descriptors DEC
ELECTRONIC CIRCUITS; ELEMENTS; HALOGENS; METALS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYMERS