Published April 2008
| Version v1
Journal article
Diagnostics of low-barrier Schottky diodes with near-surface δ-doping
Creators
- 1. Russian Academy of Science, Institute for Microstructures (Russian Federation)
Description
To find the parameters of low-barrier Schottky diodes, a diagnostics technique based on an analysis of the dependence of the differential resistance of a diode with a Mott barrier and near-surface δ-shaped doping is developed. It is shown that a complete description of the current-voltage characteristics of the diode is possible with regard to the series n--n+ junction. The technique makes it possible to optimize diodes to attain higher detection sensitivity
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 4
- Journal Page Range
- p. 490-492
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39097956
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; ELECTRIC POTENTIAL; SCHOTTKY BARRIER DIODES; SENSITIVITY; SURFACES
- Descriptors DEC
- MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.