Published November 18, 2016 | Version v1
Journal article Metadata-only

Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots

Creators

  • 1. California NanoSystems Institute, University of California—Los Angeles, Los Angeles, CA 90095 (United States)
  • 2. Department of Electrical Engineering, University of California—Los Angeles, CA 90095 (United States)
  • 3. Institute of Nanoscience and Nanotechnology, University of Arkansas, Fayetteville, AR 72701 (United States)

Description

The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/46/465701

Additional details

Identifiers

DOI
10.1088/0957-4484/27/46/465701;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
46
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50039201
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
GALLIUM ARSENIDES; INDIUM COMPOUNDS; LIFETIME; LINE WIDTHS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; STEADY-STATE CONDITIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES