Published September 2009
| Version v1
Journal article
Energy distinguish type semiconductor detector and imaging measurement applications
Creators
- 1. Shizuoka Univ., Research Institute of Electronics, Hamamatsu, Shizuoka (Japan)
- 2. Hamamatsu Photonics K.K., Electron Tube Division, Iwata, Shizuoka (Japan)
Description
Recently, semiconductor radiation detector such as Ge, Si, CdTe and so on has been developed rapidly. In this paper, we have developed the energy distinguish type CdTe line sensor and have measured X-ray penetration/CT imaging using this sensor in order to apply to material identify imaging. High atomic number and electron density resolutions were obtained in measurement images by using the dual X-ray CT method. (author)
Additional details
Publishing Information
- Journal Title
- Hoshasen
- Journal Volume
- 34
- Journal Issue
- 4
- Journal Page Range
- p. 274-279
- ISSN
- 0285-3604
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 41059021
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ACCURACY; CAT SCANNING; ELECTRON DENSITY; IMAGE PROCESSING; PENETRATION DEPTH; PERFORMANCE TESTING; RADIATION ATTENUATION TESTING; SECRECY PROTECTION; SEMICONDUCTOR DETECTORS; X RADIATION
- Descriptors DEC
- COMPUTERIZED TOMOGRAPHY; DIAGNOSTIC TECHNIQUES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MATERIALS TESTING; MEASURING INSTRUMENTS; NONDESTRUCTIVE TESTING; PROCESSING; RADIATION DETECTORS; RADIATIONS; TESTING; TOMOGRAPHY
Optional Information
- Notes
- 4 refs., 7 figs.