Published February 1977
| Version v1
Journal article
Quenching of luminescence and exciton diffusion in KI at low temperature
Creators
- 1. Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere
Description
Exciton-defect interaction in KI between 4 and 77 K is measured through the study of the intrinsic luminescence of irradiated crystals by both u.v. and electron irradiation. Results are interpreted by a possible athermal diffusion of the non-relaxed exciton at low temperature. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Solid State Communications
- Journal Volume
- 21
- Journal Issue
- 8
- Series
- Solid State Commun.
- Journal Page Range
- 725-727
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 8310094
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; DIFFUSION; ELECTRONS; EXCITATION; EXCITONS; LOW TEMPERATURE; LUMINESCENCE; PHYSICAL RADIATION EFFECTS; POTASSIUM IODIDES; SCINTILLATION QUENCHING; ULTRALOW TEMPERATURE; ULTRAVIOLET RADIATION; VERY LOW TEMPERATURE
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; FERMIONS; HALIDES; HALOGEN COMPOUNDS; INORGANIC PHOSPHORS; IODIDES; IODINE COMPOUNDS; LEPTONS; PHOSPHORS; POTASSIUM COMPOUNDS; QUASI PARTICLES; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
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