Published June 2006
| Version v1
Journal article
Effect of plasma treatment on the performance of a thin-film transistor made of poly-Si by using Ni-mediated crystallization
- 1. Kyung Hee University, Seoul (Korea, Republic of)
Description
We have studied the effect of H2 plasma treatment on the performance of a poly-Si thin-film transistor (TFT) made by using metal-induced crystallization of amorphous silicon through a cap layer (MICC). The p-channel poly-Si TFT made by using H2-plasma treatment of the MICC poly-Si exhibited a field-effect mobility of 91.5 cm2/Vs, a threshold voltage of -2.1 V, and gate voltage swing of 0.5 V/decade. The plasma treatment reduced the surface roughness from 16.7 A to 9.5 A and the grain boundary traps significantly.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 48
- Journal Issue
- 6
- Series
- 14 refs, 4 figs, 1 tab
- Journal Page Range
- p. 1526-1529
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 43010843
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; CRYSTALLIZATION; GRAIN BOUNDARIES; HYDROGEN; NICKEL; PLASMA; ROUGHNESS; SILICON; SILICON NITRIDES; TESTING; THIN FILMS; TRANSISTORS
- Descriptors DEC
- ELEMENTS; FILMS; METALS; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHASE TRANSFORMATIONS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSITION ELEMENTS