Published May 2009 | Version v1
Journal article Metadata-only

Growth and characterization of Mn-doped AgInS2 grown by a hot-press method

Creators

  • 1. Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki (Japan)
  • 2. Department of Electrical and Electronics Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)
  • 3. Institute for Materials Research, Tohoku University, Aoba-ku, Sendai (Japan)

Description

Mn-doped AgInS2 crystals are grown by a hot-press method at 700 C for 1 hour under high pressure of 25 MPa from stoichiometric Ag2S and In2S3 powders with the Mn atoms with a concentration between 5 and 20 mol.%. Mn-doped crystals showed diffraction lines of orthorhombic AgInS2 and AgIn5S8 in addition to the dominant lines of chalcopyrite AgInS2. The S composition in the crystals is slightly deficient independent of the Mn concentration. Electron states of Mn are studied by an electron spin resonance (ESR) at room temperature. The ESR intensity of the Mn-doped crystals increases with an increase in the Mn concentration. The g-factors at room temperature of the Mn-doped crystals are in the range 1.980-1.982 with the peak-to-peak linewidth in the range 4.5-8.9 mT. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200881210

Additional details

Identifiers

DOI
10.1002/pssc.200881210;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
5
Journal Page Range
p. 1043-1046
ISSN
1862-6351

Conference

Title
16. International conference on ternary multinary compounds
Acronym
ICTMC16
Dates
15-19 Sep 2008
Place
Berlin (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40055095
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL COMPOSITION; CRYSTAL GROWTH METHODS; DOPED MATERIALS; ELECTRON SPIN RESONANCE; ELECTRONIC STRUCTURE; ENERGY LEVELS; HOT PRESSING; INDIUM SELENIDES; LANDE FACTOR; LATTICE PARAMETERS; LINE WIDTHS; MANGANESE ADDITIONS; ORTHORHOMBIC LATTICES; POWDERS; PRESSURE RANGE MEGA PA 10-100; SILVER SELENIDES; SPECTRA; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TETRAGONAL LATTICES; X-RAY DIFFRACTION
Descriptors DEC
ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONLESS NUMBERS; FABRICATION; INDIUM COMPOUNDS; MAGNETIC RESONANCE; MANGANESE ALLOYS; MATERIALS; MATERIALS WORKING; PRESSING; PRESSURE RANGE; PRESSURE RANGE MEGA PA; RESONANCE; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SILVER COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 5 figs., 0 tabs., 31 refs.; SICI: 1862-6351(200905)6:5<1043::AID-PSSC200881210>3.0.TX;2-M