Published October 15, 2007 | Version v1
Journal article

Influence of sputtering parameters on crystalline structure of ZnO thin films

  • 1. Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia)
  • 2. West Bohemia University, New Technologies - Research Center, Univerzitni 8, 306 14 Plzen (Czech Republic)
  • 3. Department of Electronics, University of Rousse, Studentska 8, BG-7017 Rousse (Bulgaria)

Description

The relations between the sputtering parameters and the crystalline microstructure of ZnO thin films are presented. The energetic bombardment of substrate by neutral atoms, ions and electrons during sputtering is characterized by total energy flux density which affects the film. This parameter can be estimated by RF power, substrate bias voltage and concentration of reactive gases. Substrate temperature and total energy flux density are the major parameters which have a significant influence on ZnO thin film crystalline structure

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.03.125

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.03.125;
PII
S0040-6090(07)00462-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
24
Journal Page Range
p. 8756-8760
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
1. international symposium on transparent conducting oxides
Dates
23-26 Oct 2006
Place
Crete (Greece)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39071055
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONS; FLUX DENSITY; GASES; IONS; MICROSTRUCTURE; SPUTTERING; THIN FILMS; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; FILMS; FLUIDS; LEPTONS; OXIDES; OXYGEN COMPOUNDS; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.