Published February 1, 1991
| Version v1
Journal article
Tunneling measurement of the electron inelastic-scattering rate in a strongly disordered superconductor
Creators
- 1. Department of Physics, Ohio State University, Columbus, Ohio 43210 (USA)
Description
Tunneling measurements show that the inelastic-scattering rate for single-electron excitations in strongly disordered superconducting indium oxide films at T much-lt Tc0 is approximately proportional to T3, rather than to exp(-Δ/kBT) as expected for electron-electron scattering. A recent theory indicates that electron-phonon scattering may be the explanation
Additional details
Publishing Information
- Journal Title
- Physical Review, B: Condensed Matter
- Journal Volume
- 43
- Journal Issue
- 4
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 3732-3735
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22059581
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; INDIUM OXIDES; INELASTIC SCATTERING; LIFETIME; SUPERCONDUCTING FILMS; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; INDIUM COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING