Published April 2001 | Version v1
Journal article Metadata-only

Radiation hardness of SiC ion detectors under relativistic protons

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
  • 2. Konstantinov Institute of Nuclear Physics, Russian Academy of Sciences, Gatchina, Leningrad oblast, 188350 (Russian Federation)

Description

Schottky diodes based on 6H-SiC epitaxial films exposed to 1000 MeV protons at a dose of 3 x 1014 cm-2 have been studied by precision alpha spectrometry. Parameters of deep levels introduced by protons were determined by deep-level transient spectroscopy. The number of vacancies generated in proton tracks was found using TRIM software. The width of the space charge region and the hole diffusion length before and after irradiation were obtained by processing the alpha-spectrometry and capacitance measurements. Minor variations in the charge transport properties of epitaxial 6H-SiC detectors were observed

Additional details

Identifiers

DOI
10.1134/1.1365200;

Publishing Information

Journal Title
Semiconductors
Journal Volume
35
Journal Issue
4
Journal Page Range
p. 481-484
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051923
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ALPHA SPECTROSCOPY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXY; EXPERIMENTAL DATA; FILMS; ION DETECTION; IONS; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION HARDENING; SILICON CARBIDES; VACANCIES
Descriptors DEC
BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLE DETECTION; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; DETECTION; ELECTRICAL PROPERTIES; ENERGY RANGE; HARDENING; INFORMATION; MEV RANGE; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; PHYSICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DETECTION; RADIATION EFFECTS; SILICON COMPOUNDS; SPECTROSCOPY

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 35, 495-498 (No. 4, 2001); (c) 2001 MAIK ''Nauka / Interperiodica''.