Published July 24, 1985 | Version v1
Patent Metadata-only

Procedure for the improvement of the high-resistance of a semiconductor substrate with a low-resistive semiconductor layer

Creators

Description

The invention has been aimed at a procedure for the production of a high-resistive semiconductor substrate with a low-resistive semiconductor layer of the substrate material and can be applied to semiconductor electronics and opto-electronics. The semiconductor material without a deliberately inserted chromium, iron and oxygen doping has been bombarded by neutrons with a radiation dose of 1011 to 1015 n/cm2 or has been irradiated by a large γ-radiation source

Availability note (English)

Available from BUCHEXPORT, DDR-7010 Leipzig.

Additional details

Additional titles

Original title (German)
Verfahren zur Verbesserung der Hochohmigkeit eines Halbleitersubstrates mit niederohmiger Halbleiterschicht

Publishing Information

Imprint Pagination
vp.
IPC:
Int. Cl. H01l 21/263.
IPC
Int. Cl. H01l 21/263.
Patent number
DD patent document 225264/A/

INIS

Country of Publication
German Democratic Republic
Country of Input or Organization
German Democratic Republic
INIS RN
17027567
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
ELECTRIC CONDUCTIVITY; GAMMA RADIATION; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; SUBSTRATES
Descriptors DEC
BEAMS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS