Published March 1984 | Version v1
Journal article Metadata-only

Optoelectronic properties of single AgInS2 crystals

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

Recombination radiation and photoconductivity of single crystals of rhombic and chalcopyritic phases of AgInS2 have been studied. It is shown that recombination radiation permits to record phase transition procedure. It is shown that crystals of both phases have high photosensitivity and efficiency of recombination radiation comparable with their binary analogues (CdS and CdSe). Radiation recombination of rhombic and chalcopyritic phases has an exiton nature and is observed up to 300 K

Additional details

Additional titles

Original title (Russian)
Оптоэлектронные свойства монокристаллов AgInS

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
20
Journal Issue
3
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
379-381
ISSN
0002-337X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
16013176
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CRYSTAL-PHASE TRANSFORMATIONS; ENERGY-LEVEL TRANSITIONS; EXCITONS; INDIUM SULFIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; MONOCRYSTALS; PHOTOCONDUCTIVITY; SILVER SULFIDES; TEMPERATURE DEPENDENCE; VISIBLE SPECTRA
Descriptors DEC
CHALCOGENIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INDIUM COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; QUASI PARTICLES; SILVER COMPOUNDS; SPECTRA; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).