Published December 1983 | Version v1
Journal article Metadata-only

Photoluminescence of InP and InP:Fe crystals with implanted magnesium impurities

Creators

  • 1. P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow

Description

An investigation was made of the influence of irradiation with various doses of magnesium ions on the radiative properties of InP and InP:Fe crystals at T = 6 K. It was established that implantation of maganese ions in indium phosphide crystals gave rise at least three photoluminescence bands at energies 1.380, approx.1.3, and approx.0.9 eV. The likely nature of the radiative recombination centers was analyzed and it was concluded that the implanted magnesium impurities and defects of the indium phosphide lattice participated in the formation of these centers

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
17
Journal Issue
12
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
1391-1392
ISSN
0038-5700

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
15072038
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
DOSE RATES; INDIUM PHOSPHIDES; IRON ADDITIONS; MAGNESIUM IONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; ULTRALOW TEMPERATURE
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; EMISSION; INDIUM COMPOUNDS; IONS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).