Published April 10, 2013 | Version v1
Journal article Metadata-only

Effect of post-growth annealing on secondary phase formation in low-temperature-grown Mn-doped GaAs

Creators

  • 1. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich (Germany)
  • 2. MAX-Lab, Lund University, S-221 00 Lund (Sweden)
  • 3. Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Kongens Lyngby (Denmark)

Description

The microstructures of annealed GaAs layers containing 0.1%, 0.5% and 2% Mn are studied using aberration-corrected transmission electron microscopy (TEM). The layers were grown by molecular beam epitaxy at 270 °C. After heat treatment at 400, 560 and 630 °C, they are found to contain precipitate complexes of cubic or hexagonal (Mn, Ga) As, orthorhombic or rhombohedral As and voids. Information about the crystallographic structures and compositions of the phases is obtained using high-resolution TEM, scanning TEM and energy-dispersive x-ray spectroscopy. A phase diagram for secondary phase formation in annealed GaMnAs layers doped with low Mn concentrations is proposed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/46/14/145309

Additional details

Identifiers

DOI
10.1088/0022-3727/46/14/145309;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
46
Journal Issue
14
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44071646
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AFTER-HEAT; ANNEALING; CRYSTALLOGRAPHY; DOPED MATERIALS; GALLIUM ARSENIDES; LAYERS; MANGANESE ADDITIONS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; ORTHORHOMBIC LATTICES; PHASE DIAGRAMS; PRECIPITATION; RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY; TRIGONAL LATTICES; X-RAY SPECTROSCOPY
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIAGRAMS; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; MANGANESE ALLOYS; MATERIALS; MICROSCOPY; PNICTIDES; SEPARATION PROCESSES; SPECTROSCOPY; TRANSITION ELEMENT ALLOYS