Published November 10, 2008
| Version v1
Journal article
Effects of p-doping on the thermal sensitivity of individual Si nanowires
- 1. Laboratoire des Multimateriaux et Interfaces UMR 5615 CNRS-Universite Lyon 1, Universite de Lyon, 43 bd du 11 Novembre 1918, F-69622 Villeurbanne (France)
- 2. CEA Grenoble DRT/LITEN/DTNM/LCH, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Description
A gradual downshift and broadening of the Si optical phonon peak was observed by Raman scattering measurements on individual undoped and p-doped silicon nanowire (SiNW) when heated by a laser beam. This dual effect can be interpreted by an induced compressive stress resulting from structural defects. The p-doped SiNW was shown to be the most sensitive to heating and its structure was clearly modified with a large diffusion of gold atoms forming numerous gold nanoparticles
Additional details
Identifiers
- DOI
- 10.1063/1.2968134;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 19
- Journal Page Range
- p. 193105-193105.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051132
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; DOPED MATERIALS; GOLD; HEATING; LASERS; LINE BROADENING; PARTICLES; PHONONS; QUANTUM WIRES; RAMAN EFFECT; RAMAN SPECTRA; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SENSITIVITY; SILICON; SPECTRAL SHIFT
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; METALS; NANOSTRUCTURES; QUASI PARTICLES; SEMIMETALS; SPECTRA; STRESSES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2008 American Institute of Physics