Single-trap phenomena stochastic switching for noise suppression in nanowire FET biosensors
Creators
- 1. Institute of Biological Information Processing, Bioelectronics (IBI-3), Forschungszentrum Juelich, Juelich (Germany)
- 2. LIMMS-CNRS, Tokyo University, Institute of Industrial Science (IIS), Tokyo (Japan)
Description
With the fast-shrinking of the transistor dimensions, the low-frequency noise level considerably increases emerging as an important parameter for the design of advanced devices for information technologies. Single-trap phenomena (STP) is a promising approach for the low-frequency noise suppression technique in nanotransistor biosensors by considering trapping/detrapping noise as a signal. We show a noise reduction mechanism offered by STP in nanoscale devices making the analogy with stochastic resonance effect found in biological systems by considering a single trap as a bistable stochastically driven nonlinear system which transmits and amplifies the weak signals. The STP noise suppression effect is experimentally demonstrated for the fabricated liquid-gated nanosensors exploiting STP. We found the optimal conditions and parameters including optimized gate voltages to implement a stochastic switching effect for the extraction of useful signals from the background noise level. These results should be considered for the development of reliable and highly sensitive nanoscale biosensors. (author)
Availability note (English)
Available from DOI: https://doi.org/10.35848/1347-4065/abdc87Additional details
Identifiers
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics (Online)
- Journal Volume
- 60
- Journal Issue
- SB
- Journal Page Range
- p. SBBG03.1-SBBG03.5
- ISSN
- 1347-4065
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 53074142
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BACKGROUND NOISE; CHARGE CARRIERS; CHARGE EXCHANGE; DATA ACQUISITION; ELECTRICAL INSULATORS; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; MARKOV PROCESS; NANOWIRES; REAL TIME SYSTEMS; RESONANCE; SENSITIVITY; SIGNAL-TO-NOISE RATIO
- Descriptors DEC
- DATA PROCESSING; DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; EQUIPMENT; NANOSTRUCTURES; NOISE; PROCESSING; RADIATIONS; SEMICONDUCTOR DEVICES; STOCHASTIC PROCESSES; TRANSISTORS
Optional Information
- Notes
- 31 refs., 6 figs.