Auger recombination involving dislocations in semiconductors

Auger capture of majority carriers by a charged edge dislocation in n-type semiconductors is considered in the case of weak saturation of the dangling bonds existing on the dislocation core. The dependence of the capture radius on the depth of the one-dimensional dislocation band and on temperature is obtained. Values of temperature and free electron concentration are estimated when Auger capture is the dominant mechanism of nonradiative recombination in crystals with dislocations