Published August 1984
| Version v1
Journal article
Requirements to homogeneity of initial silicon intended to radiation alloying
Description
Consideration is being given to quantitative interrelation of limit relative deviations of resistivity from the average value in initial silicon and permissible divergences from the rating in neutron irradiated silicon with regard to real irradiation conditions. Statistical processing of data on alloying a large lot of silicon 84 mm in diameter was conducted from the viewpoint of presented requirements to homogeneity of initial monocrystals
Additional details
Additional titles
- Original title (Russian)
- Анализ требований к однородности исходного кремния для радиационного легирования
Publishing Information
- Journal Title
- Tsvetn. Met.
- Journal Issue
- no.8
- Series
- Tsvetn. Met.
- ISSN
- 0372-2929
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 16030064
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; FLUX DENSITY; ION IMPLANTATION; MONOCRYSTALS; NEUTRON FLUX; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATION FLUX; SEMIMETALS
Optional Information
- Notes
- For English translation see the journal Soviet Journal of Non-Ferrous Metals (USA).