Microstructural defects in SiC neutron irradiated at very high temperatures
Creators
- 1. Materials Science and Technology Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831-6138 (United States)
Description
Microstructures in high purity β-SiC irradiated with fast neutrons (up to ∼9.6 x 1025 n/m2, in HFIR) at very high temperatures (1130, 1300, and 1460 deg. C) were studied by transmission electron microscopy. Cavities and dislocation loops were generally observed in irradiated samples. The cavities were preferentially formed at grown-in stacking faults, and were spherical in shape below 1300 deg. C and mainly faceted with {1 1 1} planes at 1460 deg. C. Estimated volume fractions of observed cavities were much smaller than macroscopic densitometer swelling recently reported, which implies other defects cause the swelling in this temperature regime. Larger Frank loops (>25 nm in radius) formed at 1460 deg. C were identified as interstitial type using the inside/outside method. Unfaulting of the loops was not observed or was very rare. Rapid loop growth and density decrease were observed in the temperature range of 1300-1460 deg. C concurrently with the rapid cavity growth. The limited growth rate of dense loops at lower temperature was discussed in terms of high sink density estimated from a grain-boundary-loop-denuded zone formed at 1130 deg. C
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2008.08.013Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2008.08.013;
- PII
- S0022-3115(08)00458-3;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 382
- Journal Issue
- 2-3
- Journal Page Range
- p. 160-169
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- Symposium on microstructural processes in irradiated materials - Annual meeting of The Minerals, Metals and Materials Society
- Acronym
- TMS 2007
- Dates
- 25 Feb - 1 Mar 2007
- Place
- Orlando, FL (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40047141
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAVITIES; DEFECTS; FAST NEUTRONS; GRAIN BOUNDARIES; INTERSTITIALS; IRRADIATION; SCREW DISLOCATIONS; SILICON CARBIDES; STACKING FAULTS; SWELLING; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BARYONS; CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; DISLOCATIONS; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; FERMIONS; HADRONS; LINE DEFECTS; MICROSCOPY; MICROSTRUCTURE; NEUTRONS; NUCLEONS; POINT DEFECTS; SILICON COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.