Published June 2004
| Version v1
Miscellaneous
Open
Synchrotron X-ray diffraction studies of silicon implanted with deuterium ions after high pressure thermal annealing
- 1. Institute of Atomic Energy, Otwock-Swierk (Poland)
- 2. Institute of Electronic Materials Technology, Warsaw (Poland)
- 3. HASYLAB at Desy, Hamburg (Germany)
- 4. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Files
36036762.pdf
Files
(200.8 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:3791e3038d8774f56c34919b3d7ceedc
|
200.8 kB | Preview Download |
Additional details
Publishing Information
- Imprint Title
- Annual Report 2003 of the Institute of Atomic Energy
- Imprint Pagination
- 173 p.
- Journal Page Range
- p. 98-99
- ISSN
- 1507-5478
- Report number
- INIS-PL--2005-0002
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 36036762
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; DEUTERIUM IONS; INCLUSIONS; ION IMPLANTATION; PRESSURE RANGE MEGA PA 01-10; RADIATION FLUX; SILICON; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- BREMSSTRAHLUNG; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONS; PRESSURE RANGE; PRESSURE RANGE MEGA PA; RADIATIONS; SCATTERING; SEMIMETALS
Optional Information
- Notes
- 3 figs