Published February 1984
| Version v1
Journal article
Dechanneling of 1200-MeV electrons in a silicon single crystal
- 1. Physicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Kharkov
Description
In this letter we report an experimental study of the dechanneling length of 1200-MeV electrons as they move along the [111] axis and the (110) plane in a silicon single crystal. The dechanneling is studied by studying the yield of the high-energy component of the secondary electron emission as a function of orientation of the crystal
Additional details
Publishing Information
- Journal Title
- Sov. Tech. Phys. Lett. (Engl. Transl.)
- Journal Volume
- 10
- Journal Issue
- 2
- Series
- Sov. Tech. Phys. Lett. (Engl. Transl.).
- Journal Page Range
- 82-83
- ISSN
- 0360-120X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16049740
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTROMAGNETIC RADIATION; ELECTRON CHANNELING; ELECTRON EMISSION; GEV RANGE 01-10; MONOCRYSTALS; ORIENTATION; SECONDARY EMISSION; SILICON
- Descriptors DEC
- CHANNELING; CRYSTALS; ELEMENTS; EMISSION; ENERGY RANGE; GEV RANGE; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Pis'ma v Zhurnal Tekhnicheskoj Fiziki (USSR).