Behaviour of oxygen in monocrystalline silicon under high-temperature treatment in a γ-field

The effect of high-temperature treatment (at 1000 deg C) in a γ-field on the behaviour of oxygen in n-type monocrystalline silicon with initial oxygen content of (6-8) x 1017 cm-3 is studied. Kinetics of oxygen yield from soluble state into phase was studied by the method of IR absorption. It is ascertained that treatment in the γ-field facilitates the yield of excessive oxygen in silicon from solution into phase. Such treatment is recommended for production of additional origination sites and acceleration of oxygen precipitation in silicon utilizing getter properties of oxygen-silicon complexes