Solid-state research using Rutherford-backscattering

A short review is given on the use of Rutherford backscattering in crystal analysis. The basic principles of the method are summarized, and the so-called double-alignment technique is discussed. Some examples are shown such as the spectra of Si-monocrystals before and after argon-implantation, localization of As in Si matrix, etc. On the basis of the experimental data information can be obtained on microstructure of the crystals especially in connection with electric measurements. (T.G.)