Published October 2018 | Version v1
Journal article

High performance CdSe quantum dot sensitized ZnO solar cell fabricated from ion exchange

  • 1. Department of Physical Chemistry, School of Science, Beijing University of Chemical Technology, Beijing, 100029 (China)
  • 2. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 (China)
  • 3. University of Chinese Academy of Sciences, Beijing, 100049 (China)

Description

Highlights: • Efficient CdSe sensitized ZnO QDSSC is fabricated through ion exchanges. • The cell exhibits relative high light harvesting and low charge recombination. • ZnSe overcoating is introduced to enhance the cell efficiency. • High power conversion efficiency of 5.08% is achieved. We report on a facile and efficient way to prepare CdSe/ZnO photoanode for quantum dot sensitized solar cell (QDSSC). CdSe/ZnO is achieved through a two-step ion exchange process in aqueous solution at lower temperature. SEM, light absorption, dark current and impedance spectroscopy analyses revealed that this process of ion exchange can form not only higher amount and larger sized QDs on ZnO that lead to the enhancement of light harvesting, but also full coverage of QDs on ZnO as well as excellent QD/ZnO interfaces that contribute to the suppression of charge recombination. In combination with ZnSe overcoating, QDSSC assembled with the CdSe/ZnO photoanode exhibits high cell efficiency of 5.08%.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2018.06.095

Additional details

Identifiers

DOI
10.1016/j.jallcom.2018.06.095;
PII
S0925838818322163;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
765
Journal Page Range
p. 355-361
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.