Published March 2008
| Version v1
Journal article
On the modes of evaporation of Si and dopants in vacuum epitaxy procedures
- 1. Nizhni Novgorod State University, Research Physicotechnical Institute (Russian Federation)
Description
Silicon layers are grown by sublimation molecular beam epitaxy at the rate 1 μm h−1 at temperatures 500–900°C in vacuum at the pressure 10−5 Pa. The possibility of varying the Sb concentration in the Si layers in the range from 1015 to 1020 cm−3 by varying the temperature of epitaxy is shown. The potentialities of different modes of vacuum evaporation of Si and dopants are analyzed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 3
- Journal Page Range
- p. 251-256
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43095026
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; LAYERS; MOLECULAR BEAM EPITAXY; SILICON; SUBLIMATION; VACUUM EVAPORATION
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; EVAPORATION; MATERIALS; PHASE TRANSFORMATIONS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.