Observation of Work Functions, Metallicity, Band Bending, Interfacial Dipoles by EUPS for Characterizing High-k/Metal Interfaces

EUPS (EUV excited photoelectron spectroscopy) is a novel photoelectron spectroscopy technique, in which a sample is excited with 4.86 nm (255 eV), 3-ns pulse EUV light emitted from a laser-produced plasma and the resulting electron spectrum is analyzed with a time-of-flight (TOF) analyzer. EUPS gives information of the topmost atoms because the escape depth of photo-electrons excited by 4.86 nm light is only 0.5 nm. EUPS can evaluate band-bending because the peak density of the excitation light on the sample is extremely high, so that bent electronic bands in semiconductors can be flattened. Secondary electron spectra, from which the vacuum level of the material surface can be determined, are obtained very quickly owing to the use of a TOF analyzer, The metal gate related issues are one of the most challenging topics facing CMOS technology. This paper demonstrates EUPS as a powerful method for characterizing high-k/metal interfaces by showing data from direct observations of interfacial dipoles.