Published October 15, 2014 | Version v1
Journal article Metadata-only

Control of defects in a novel aluminum-induced heteroepitaxial growth of AlxGal-xP nanocrystals on silicon nanowires

Creators

  • 1. Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006 (China)
  • 2. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120 (Germany)
  • 3. Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China)
  • 4. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

Description

Aluminum-induced heteroepitaxial growth of aluminum gallium phosphide nanocrystals (AlxGal-xP NCs) has been achieved on both silicon substrate and the tips of Al-catalyzed silicon nanowires (Si NWs). Al-induced growth is a silicon complementary metal–oxide-semiconductor compatible solution, and a growth mechanism of AlxGal-xP NCs was proposed. The decrease in structural defects in AlxGal-xP NCs grown heteroepitaxially on Si NWs was confirmed by transmission electron microscopy and Raman spectroscopy

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2014.06.026

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2014.06.026;
PII
S1359-6462(14)00257-7;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
89
Journal Page Range
p. 57-60
ISSN
1359-6462
CODEN
SCMAF7

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47011096
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; CONTROL; GALLIUM; NANOWIRES; OXIDES; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; LASER SPECTROSCOPY; MATERIALS; METALS; MICROSCOPY; NANOSTRUCTURES; OXYGEN COMPOUNDS; SEMIMETALS; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.