Published July 2018 | Version v1
Journal article

Synthesis, crystal structure, and thermoelectric properties of layered antimony selenides REOSbSe2 (RE = La, Ce)

  • 1. Tokyo Metropolitan University, Department of Physics, Hachioji, Tokyo (Japan)
  • 2. Hokkaido University, Faculty of Engineering, Sapporo, Hokkaido (Japan)
  • 3. Keio University, Faculty of Science and Technology, Yokohama, Kanagawa (Japan)
  • 4. Hiroshima University, Department of Physical Science, Higashi-Hiroshima, Hiroshima (Japan)

Description

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 W m−1 K−1 for RE = La and 0.8 W m−1 K−1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2− with F ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging. (author)

Availability note (English)

Available from http://dx.doi.org/10.7566/JPSJ.87.074703

Additional details

Identifiers

Publishing Information

Journal Title
Journal of the Physical Society of Japan (Online)
Journal Volume
87
Journal Issue
7
Journal Page Range
p. 074703.1-074703.6
ISSN
1347-4073

Optional Information

Notes
45 refs., 7 figs., 2 tabs.