Optimized properties of xBiInO₃-(1-x)PbTiO₃ thin films deposited by an RF-magnetron sputtering method

Ferroelectric xBiInO₃-(1-x)PbTiO₃ (x = 0.15, 0.20, 0.25, and 0.30) thin films are deposited on (101)SrRuO₃/(100)Pt/(100)MgO substrates by an RF-magnetron sputtering method. By adjusting the deposition conditions, the electric properties of the thin films are optimized. The ferroelectricities of the thin films show that the remnant polarizations (P_r) decrease from 43 to 34 μC cm^-2 as x increases from 0.15 to 0.25, and the coercive fields (E_c) are about 177 kV cm^-1. The Curie temperatures (T_c) increase from 580 to 650 C on increasing x from 0.15 to 0.30. The results illustrate that the xBI-(1-x)PT films have high ferroelectricities, high coercive fields, and high Curie temperatures simultaneously, which may have wide potential applications in high-temperature and -voltage environments. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)