Published March 31, 2006 | Version v1
Journal article

Room temperature ferromagnetism in III-V and II-IV-V2 dilute magnetic semiconductors

  • 1. Russian Research Center 'Kurchatov Institute', Kurchatov Sq.1, Moscow 123182 (Russian Federation)
  • 2. Physik-Institut der Universitaet Zuerich, CH-8057 Zurich (Switzerland)
  • 3. Laboratory for Muon Spin Spectroscopy, CH-5232 Villigen PSI (Switzerland)
  • 4. Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States)
  • 5. Institute for General and Inorganic Chemistry, Moscow 119991 (Russian Federation)
  • 6. Canadian Institute for Advanced Research and Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

Description

A new class of ferromagnets-dilute magnetic semiconductors (DMS) based on III-V materials (e.g. In1-xMnxAs or Ga1-xMnxAs)-which are both semiconducting and ferromagnetic (FM) at low temperature, have attracted a great deal of attention (as working media for spintronics) following the discovery of ferromagnetism in Ga1-xMnxAs. However, practical spintronics applications of these DMS are severely limited by the fact that they are FM only at low temperature (below about 150K). Here we present the results of our studies in III-V (InSb) and II-IV-V2 (CdGeAs2 and CdGeP2) materials doped with Mn which exhibit robust ferromagnetism at room temperature. μSR experiments show that this ferromagnetism is a bulk phenomenon

Additional details

Identifiers

DOI
10.1016/j.physb.2005.11.124;
PII
S0921-4526(05)01342-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
374-375
Journal Page Range
p. 430-432
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
10. international conference on muon spin rotation, relaxation and resonance
Dates
8-12 Aug 2005
Place
Oxford (United Kingdom)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.