Published December 1974
| Version v1
Journal article
Integrated circuit model development for EMP
Creators
- 1. Rockwell International Autonetic, Anaheim, CA
Description
The response of Integrated Circuits (IC) to pulsed snd gated sine-wave stimuli can be used to develop reasonably accurate device models for EMP assessment. These IC models can then be used in conjunction with circuit and transfer function models to determine the failure threshold (upset and burnout) to postulated EMP distrubance.
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 21
- Journal Issue
- 6
- Series
- IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci.
- Journal Page Range
- 323-331
- ISSN
- 0018-9499
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 15 Jul 1974.
- Place
- Fort Collins, CO.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6197225
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTROMAGNETIC PULSES; FAILURES; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent