Published January 2012 | Version v1
Journal article Metadata-only

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Creators

  • 1. Department of Physics, Chemistry and Biology, Linkoeping University (Sweden)
  • 2. Instituto Tecnologico e Nuclear, Sacavem (Portugal)
  • 3. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York (United States)
  • 4. Department of Photonics, Ritsumeikan University, Shiga (Japan)
  • 5. Groupe d'Etude des Semiconducteurs, Universite Montpellier-II (France)

Description

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201100175

Additional details

Identifiers

DOI
10.1002/pssa.201100175;

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
209
Journal Issue
1
Journal Page Range
p. 91-94
ISSN
1862-6300

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
43024436
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; ELECTRON DENSITY; GRAIN SIZE; HYDROGEN ADDITIONS; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; STACKING FAULTS; SUBSTRATES; THIN FILMS; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONLESS NUMBERS; EPITAXY; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; MICROSCOPY; MICROSTRUCTURE; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PNICTIDES; SCATTERING; SIZE

Optional Information

Notes
With 3 figs., 1 tab., 24 refs.