Published January 4, 2010
| Version v1
Journal article
Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures
Creators
- 1. National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2-1, Tsukuba 305-8568 (Japan)
Description
Room temperature photoreflectance (PR) was performed on strained InxGa1-xAs/AlAsSb quantum wells (QWs) grown on InP substrates. We observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs. By comparing the transition energies measured from the PR spectra with those theoretically calculated from the confined energy levels in the QWs, we confirmed that the value of the conduction band offset of In0.8Ga0.2As/AlAsSb was close to 1.7 eV and the nonparabolicity of the conduction band of In0.8Ga0.2As was between 2.25 and 2.5, which is higher than that obtained using a three-band model.
Additional details
Identifiers
- DOI
- 10.1063/1.3295366;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1199
- Journal Issue
- 1
- Journal Page Range
- p. 199-200
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 29. international conference on the physics of semiconductors
- Dates
- 27 Jul - 1 Aug 2008
- Place
- Rio de Janeiro (Brazil)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41101847
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; ANTIMONIDES; ELECTRONIC STRUCTURE; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EV RANGE; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SPECTRAL REFLECTANCE; SUBSTRATES; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2009 American Institute of Physics