Published December 2011
| Version v1
Journal article
Photoresponse Properties of an n-ZnS/p-Si Heterojunction
- 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)
Description
An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I—V) characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a turn-on voltage of about 1.8V. The UV (330 nm) and visible (450 nm) photoresponse properties of the heterojunction are also investigated, which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/28/12/127301Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 28
- Journal Issue
- 12
- Journal Page Range
- [3 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45004098
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY GAP; EV RANGE; HETEROJUNCTIONS; N-TYPE CONDUCTORS; PHOTOCURRENTS; PHOTODETECTORS; P-TYPE CONDUCTORS; SILICON; SPUTTERING; THIN FILMS; VISIBLE RADIATION; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; FILMS; INORGANIC PHOSPHORS; MATERIALS; PHOSPHORS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS