Published August 1989 | Version v1
Journal article Metadata-only

Influence of γ-irradiation on the surface states density distribution in MOS structures

Creators

Description

The influence of γ-quanta irradiation on the properties of Al-SiO2-n-Si type MOS-structures has been considered. The formation of characteristic peaks in the surface states density distribution is observed which is attributed to the existence of vacancy and impurity inclusions at the semiconductor-insulator interface

Additional details

Additional titles

Original title (Russian)
Влияние γ-облучения на изменение распределения плотности поверхностных состояний в МДП-структурах

Publishing Information

Journal Title
Poverkhnost': Fizika, Khimiya, Mekhanika
Journal Issue
no.8
Series
Poverkhn.: Fiz., Khim., Mekh.
CODEN
PFKMD

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
22020518
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; CHARGE CARRIERS; GAMMA RADIATION; INTERFACES; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SILICON OXIDES; SOLID CLUSTERS; VACANCIES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; METALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS