Deep l-c centers in indium antimonide

The investigation of deep centers in crystals of indium antimonide has been carried out. The investigation of photoconduction spectra, the dependence of the Hall coefficient and electric conductivity has been conducted in the temperature interval from 20 to 100 K. For the first time Ev + 0.086 and Ev + 0.11 eV deep levels belonging to l-c centers are detected; their characteristics were determined. A sharp peak observed in the spectrum of photoconductivity predicted by a generalized model of the deep center at two-zone approximation for l-c-center - valence zone transitions confirms the reality of two different types (l-c and h) of states of deep centers in InSb