Published 2015 | Version v1
Journal article

Dependence of electronic color center concentration on the state of irradiated LiF crystal dislocation structure

  • 1. A.M. Beketov National University of Urban Economy, Kharkov (Ukraine)

Description

The optical radiation absorption has been investigated for LiF crystals preliminary deformed to the level of 0.155 and 1.5% under irradiation to a dose of 1057 R. A conclusion on the presence of F-centers in irradiated crystals is drawn. The volume density of the observed radiation defects is evaluated. Basing on the experimental data of the present and previous papers the deformation dependences of the spectral damping coefficient Kλ and the concentration NF of F centers were investigated

Additional details

Additional titles

Original title (Russian)
Зависимост' концентрации електронных центров окраски от состояния дислоксционной структуры облученных кристаллов LiF

Publishing Information

Journal Title
Voprosy Atomnoj Nauki i Tekhniki
Journal Issue
no2-96
Journal Page Range
p. 25-28
ISSN
1562-6016