The temperature-frequency dispersion of the dielectric characteristics of composite materials based on polyethylene with TlInS2 inclusions

The study presents the results of dispersion dependences of dielectric characteristics of composite structures based on polyethylene of high density with inclusions of ferroelectric semiconductor TlInS2, which have been manufactured from a homogeneous mixture of powder components by hot pressing in a wide range of filler concentration, temperatures and frequencies of the measuring electric field. It is shown that, the temperature-frequency dispersion of dielectric characteristics of the composite films under study undergoes substantial changes in the ranges of frequencies of f = 103-5x104 Hz and temperatures of T = 60-115 degrees Celsius. It is determined that, the hysteresis phenomena appear at temperatures of T < 115 degrees Celsius, whose main mechanism is the effect of 'asymmetry' of temperature evolution of electrically active defects upon heating and cooling in these heterogeneous macro systems. (authors)