PC operated acoustic transient spectroscopy of deep levels in MIS structures

A new version of acoustic deep-level transient spectroscopy is presented to study the traps at the insulator-semiconductor interface. The acoustic deep-level transient spectroscopy uses an acoustoelectric response signal produced by the MIS structure interface when a longitudinal acoustic wave propagates through a structure. The acoustoelectric response signal is extremely sensitive to external conditions of the structure and reflects any changes in the charge distribution, connected also with charged traps. In comparison with previous version of acoustic deep-level transient spectroscopy that closely coincides with the principle of the original deep-level transient spectroscopy technique, the present technique is based on the computer-evaluated isothermal transients and represents an improved, more efficient and time saving technique. Many tests on the software used for calculation as well as on experimental setup have been performed. The improved acoustic deep-level transient spectroscopy method has been applied for the Si(p) MIS structures. The deep-level parameters as activation energy and capture cross-section have been determined. (authors)