Published November 2018
| Version v1
Journal article
Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics
- 1. Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan (Uzbekistan)
- 2. Luikov Heat and Mass Transfer Institute, National Academy of Science of Belarus (Belarus)
Description
The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are characterized by a weak temperature dependence of the photocurrent. As a result, there is a gradual increase in the light current, which ensures high photosensitivity values under low light.
Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Solar Energy
- Journal Volume
- 54
- Journal Issue
- 5
- Journal Page Range
- p. 330-332
- ISSN
- 0003-701X
- CODEN
- ASOEA6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54076805
- Subject category
- S14: SOLAR ENERGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC POTENTIAL; PHOTOCURRENTS; PHOTODIODES; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; SILICON; SOLAR CELLS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CURRENTS; DIRECT ENERGY CONVERTERS; ELECTRIC CURRENTS; ELEMENTS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SENSITIVITY; SOLAR EQUIPMENT
Optional Information
- Copyright
- Copyright (c) 2018 Allerton Press, Inc.